Description
Multilayer CVD-grown graphene transferred onto 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.
Properties of Graphene Film:
The thickness and quality of our graphene films is controlled by Raman Spectroscopy
The graphene coverage of this product is about 95%
The graphene film is continuous, with occasional holes and cracks
The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
Sheet Resistance: 660-1,500 Ω/square
Optical Image of Multilayer Graphene on SiO2
The graphene grown on nickel film is multilayer and is not uniform. It looks like a patchwork whereas the “patches” have different thicknesses. The thickness of the film varies from 1 to 7 layers, with an average of 4. The graphene layers within the same patch are aligned relative to each other (there is a graphitic AB-staking order). The size of the patches is about 3-10 microns.
Properties of Silicon/Silicon Dioxide Wafers:
Oxide Thickness: 285 nm
Color: Violet
Wafer thickness: 525 micron
Resistivity: 0.001-0.005 Ω⋅cm
Type/Dopant: P/Boron
Orientation: <100>
Front Surface: Polished
Back Surface: Etched
Applications:
Graphene electronics and transistors
Conductive coatings
Aerospace industry applications
Support for metallic catalysts
Microactuators
MEMS and NEMS
Chemical and biosensors
Multifunctional materials based on graphene
Graphene Research
Our graphene films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.
Academic References / Read More
Graphene Growth
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314
Graphene Transfer
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363
Toward Clean and Crackless Transfer of Graphene Liang et.al., ACS Nano, 2011, 5 (11), pp 9144–9153
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